To monitor the morphology of the surface, configuration of annealing, and rate of acceleration, a tunnel junction structure of oxide through a passivation quality of better V oc on a wafer of n-type cell might be accomplished. In this review, various techniques of deposition were utilized for the layer of SiO x tunnel oxide, such as thermal oxidation, ozone oxidation, chemical oxidation, and plasma-enhanced chemical vapor deposition (PECVD). The thickness of tunnel oxide, which is less than 2 nm in the TOPCon cell, primarily affects the electrical properties and efficiency of the cell. In addition to the different technologies of silicon solar cells in crystalline form, TOPCon solar cells have an exceptionally great efficiency of 26%, accomplished by the manufacturing scale technique for industrialization, and have inordinate cell values of 732.3 mV open-circuit voltage (V oc) and a fill factor (FF) of 84.3%.
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